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1 CGH21240F 240 w, 1800-2300 mhz, gan hemt for wcdma, lte, wimax crees CGH21240F is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally with high effciency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3ghz wcdma and lte amplifer applications. the transistor is supplied in a ceramic/metal fange package. package type: 440117 pn: CGH21240F preliminary r e v 1 . 0 C m a y 2 0 1 0 features ? 1.8 - 2.3 ghz operation ? 15 db gain ? -35 dbc aclr at 40 w p ave ? 33 % effciency at 40 w p ave ? high degree of dpd correction can be applied typical performance over 2.0-2.3ghz (t c = 25?c) of demonstration amplifer parameter 2.0 ghz 2.1 ghz 2.2 ghz 2.3 ghz units gain @ 46 dbm 13.1 14.6 15.1 15.7 db aclr @ 46 dbm -36.5 -34.5 -34.2 -32.0 dbc drain effciency @ 46 dbm 30.5 32.7 32.9 33.8 % note: measured in the CGH21240F-tb amplifer circuit, under wcdma 3gpp test model 1, 64 dpch, 67% clipping, par = 8.81 db @ 0.01 % probability on ccdf. subject to change without notice. www.cree.com/wireless
2 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units drain-source voltage v dss 84 volts gate-to-source voltage v gs -10, +2 volts power dissipation p diss 115 watts storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 60 ma soldering temperature 1 t s 245 ?c screw torque 80 in-oz thermal resistance, junction to case 2 r jc 0.75 ?c/w case operating temperature 2 t c -40, +150 ?c note: 1 refer to the application note on soldering at www.cree.com/products/wireless_appnotes.asp 2 measured for the CGH21240F at p diss = 115 w electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.3 -2.3 v dc v ds = 10 v, i d = 57.6 ma gate quiescent voltage v gs(q) C -3.0 C v dc v ds = 28 v, i d = 1.0 a saturated drain current 2 i ds 46.4 56.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 57.6 ma rf characteristics 5 (t c = 25 ? c, f 0 = 2.14 ghz unless otherwise noted) saturated output power 3,4 p sat C 215 C w v dd = 28 v, i dq = 1.0 a pulsed drain effciency 3 C 65 C % v dd = 28 v, i dq = 1.0 a, p out = p sat modulated gain 6 g ss 13.5 15 C db v dd = 28 v, i dq = 1.0 a, p out = 46 dbm wcdma linearity 6 aclr C -35 -30 dbc v dd = 28 v, i dq = 1.0 a, p out = 46 dbm modulated drain effciency 6 27 33 C % v dd = 28 v, i dq = 1.0 a, p out = 46 dbm output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 1.0 a, p out = 40 w cw dynamic characteristics input capacitance 7 c gs C 172 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance 7 c ds C 19.5 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 3.2 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 pulse width = 40 s, duty cycle = 5 %. 4 p sat is defned as i g = 20 ma peak. 5 measured in CGH21240F-tb. 6 single carrier wcdma, 3gpp test model 1, 64 dpch, 67 % clipping, par = 8.81 db @ 0.01 % probability on ccdf. 7 includes package and internal matching components.
3 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical pulse performance typical pulsed output power, drain effciency, and gain vs input power of the CGH21240F measured in CGH21240F-tb amplifer circuit. v ds = 28 v, i ds = 1.0 a, freq = 2.14 ghz, pulse width = 40 s, duty cycle = 5 % typical pulsed saturated power and drain effciency vs frequency of the CGH21240F measured in CGH21240F-tb amplifer circuit. v ds = 28 v, i ds = 1.0 a, p sat = 20 ma i gs peak, pulse width = 40 s , duty cycle = 5 % 14 15 16 17 18 40 50 60 70 80 gai n ( d b ) ou t p u t po w er ( d b m) d r ai n ef f i ci en cy ( % ) output power drain efficiency gain 10 11 12 13 14 0 10 20 30 40 0 5 10 15 20 25 30 35 40 45 gai n ( d b ) ou t p u t po w er ( d b m) d r ai n ef f i ci en cy ( % ) input power (dbm) gain effciency output power 62 64 66 68 53.5 54.0 54.5 55.0 d r ai n ef f i ci en cy ( % ) sat u r ated ou t p u t po w er ( d b m) 56 58 60 62 52.0 52.5 53.0 53.5 2.00 2.05 2.10 2.15 2.20 2.25 2.30 d r ai n ef f i ci en cy ( % ) sat u r ated ou t p u t po w er ( d b m) frequency (ghz) psat drain efficiency
4 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical linear performance typical small signal gain and return loss vs frequency of the CGH21240F measured in CGH21240F-tb amplifer circuit. v ds = 28 v, i ds = 1.0 a typical wcdma performance typical wcdma characteristics aclr and drain effciency vs output power of the CGH21240F measured in CGH21240F-tb amplifer circuit. 3gpp test model 1, 64 dpch 67 % clipping, 8.81 db par @ 0.01 % v ds = 28 v, i ds = 1.0 a, frequency = 2.14 ghz - 10 -8 -6 -4 -2 0 15 16 17 18 19 20 r et u r n l o ss ( d b ) l i n ear gai n ( d b ) -20 -18 -16 -14 -12 - 10 10 11 12 13 14 15 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 r et u r n l o ss ( d b ) l i n ear gai n ( d b ) frequency (ghz) gain return loss 20 25 30 35 40 - 37 -35 -33 -31 -29 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) -aclr +aclr drain efficiency 0 5 10 15 20 -45 -43 -41 -39 - 37 25 30 35 40 45 50 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) output power (dbm)
5 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical wcdma digital pre-distortion (dpd) performance wcdma characteristics with and without dpd correction aclr and drain effciency vs output power of the CGH21240F measured in CGH21240F-tb amplifer circuit. single channel wcdma 6.5db par with cfr v ds = 28 v, i ds = 1.0 a, frequency = 2.14 ghz wcdma linearity with dpd linearizer of the CGH21240F measured in CGH21240F-tb amplifer circuit. single channel wcdma 6.5db par with cfr v ds = 28 v, i ds = 1.0 a, p ave = 46 dbm, effciency = 30 % 25 30 35 40 45 -45 -40 -35 -30 -25 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) uncorrected -aclr uncorrected +aclr corrected -aclr corrected +aclr uncorrected drain eff corrected drain eff 0 5 10 15 20 -70 -65 -60 -55 -50 32 34 36 38 40 42 44 46 48 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) output power (dbm) - 40 -30 -20 -10 0 uncorrected dpd corrected -80 -70 -60 -50 - 40 2.125 2.130 2.135 2.140 2.145 2.150 2.155 frequency (ghz)
6 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance simulated performance of the CGH21240F from 1.8 - 2.17 ghz v dd = 28 v, i dq = 1.0 a CGH21240F power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). drain effciency (%), output power (dbm) 80 100 120 140 po w er d i ssi p ati o n ( w ) CGH21240F average power dissipation de-rating curve 0 20 40 60 80 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum case temperature (c) note 1
7 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance simulated maximum available gain and k factor of the CGH21240F v dd = 28 v, i dq = 1.0 a typical noise performance simulated minimum noise figure and noise resistance vs frequency of the CGH21240F v dd = 28 v, i dq = 1.0 a mag (db) k factor minimum noise figure (db) noise resistance (ohms)
8 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. source and load impedances frequency (mhz) z source z load 1900 4.50 - j 4.36 2.98 - j 0.69 1950 4.28 - j 4.23 3.17 - j 0.88 2000 4.05 - j 4.04 3.20 - j 1.22 2050 3.86 - j 3.82 2.98 - j 1.60 2100 3.69 - j 3.58 2.52 - j 1.85 2150 3.55 - j 3.32 1.95 - j 1.85 2200 3.44 - j 3.04 1.42 - j 1.63 2250 3.36 - j 2.76 1.00 - j 1.28 2300 3.30 - j 2.47 0.70 - j 0.86 note 1 v dd = 28v, i dq = 1.0 a in the 440117 package. note 2 impedances are extracted from CGH21240F-tb demonstration circuit and are not source and load pull data derived from transistor. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a > 250 v jedec jesd22 a114-d charge device model cdm 1 < 200 v jedec jesd22 c101-c d z source z load g s
9 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH21240F-tb demonstration amplifer circuit bill of materials designator description qty r1 res, 1/16w, 0603, 1%, 100 ohms 1 r2 res, 1/16w, 0603, 1%, 5.1 ohms 1 c1 cap, 27 pf, +/-5%, atc600s 1 c2 cap, 2.0 pf, +/-0.1pf, atc600s 1 c3 cap, 10 pf, +/-5%, atc600s 1 c4, c10 cap, 470 pf, +/-5%, 100v, 0603 2 c5, c11, c16 cap, 33000 pf, 0805, 100v, x7r 3 c6, c12, c17 cap, 1.0 uf, +/-10%, 1210, 100v, x7r 3 c7 cap, 10 uf, 16v, tantalum 1 c8, c14 cap, 2.0pf, +/-0.1pf, 250v, 0805, atc600f 2 c9, c15 cap, 10pf, +/-0.1pf, 250v, 0805, atc600f 2 c13 cap 100 uf, 160v, electrolytic 1 c18 cap, 33 uf, +/-20%, g case 1 c19, c20 cap, 39pf, +/-5%, 250v, 0805, atc600f 2 j1, j2 conn, n-type, female, 0.500 sma flange 2 j3 conn, header, rt> plz, 0.1 cen, lk, 9 pos 1 - pcb, ro4350, er = 3.48, h = 20 mil 1 - CGH21240F 1 CGH21240F-tb demonstration amplifer circuit
10 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH21240F-tb demonstration amplifer circuit schematic CGH21240F-tb demonstration amplifer circuit outline
11 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical package s-parameters for CGH21240F (small signal, v ds = 28 v, i dq = 1.0 a, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.983 179.25 1.84 66.59 0.004 -13.75 0.823 -177.25 600 mhz 0.983 178.45 1.56 61.58 0.004 -16.73 0.828 -176.89 700 mhz 0.982 177.73 1.36 56.57 0.004 -19.66 0.834 -176.58 800 mhz 0.981 177.04 1.22 51.54 0.004 -22.56 0.841 -176.31 900 mhz 0.980 176.38 1.12 46.42 0.004 -25.48 0.848 -176.07 1.0 ghz 0.978 175.72 1.04 41.17 0.004 -28.46 0.855 -175.87 1.1 ghz 0.976 175.07 0.99 35.70 0.004 -31.57 0.862 -175.71 1.2 ghz 0.974 174.42 0.95 29.94 0.004 -34.88 0.870 -175.56 1.3 ghz 0.970 173.77 0.93 23.76 0.004 -38.51 0.879 -175.44 1.4 ghz 0.966 173.13 0.92 16.98 0.005 -42.62 0.888 -175.35 1.5 ghz 0.961 172.51 0.92 9.40 0.005 -47.40 0.898 -175.28 1.6 ghz 0.954 171.95 0.93 0.77 0.005 -53.11 0.910 -175.28 1.7 ghz 0.947 171.50 0.94 -9.23 0.005 -60.04 0.925 -175.39 1.8 ghz 0.939 171.24 0.95 -20.82 0.006 -68.42 0.941 -175.71 1.9 ghz 0.933 171.20 0.94 -34.02 0.006 -78.25 0.957 -176.32 2.0 ghz 0.931 171.32 0.90 -48.37 0.006 -89.09 0.971 -177.25 2.1 ghz 0.935 171.39 0.83 -62.95 0.006 -100.00 0.979 -178.39 2.2 ghz 0.944 171.20 0.74 -76.66 0.005 -109.90 0.981 -179.50 2.3 ghz 0.954 170.68 0.64 -88.79 0.005 -118.09 0.979 179.57 2.4 ghz 0.963 169.89 0.54 -99.14 0.004 -124.40 0.974 178.85 2.5 ghz 0.971 168.91 0.46 -107.87 0.004 -128.98 0.970 178.30 2.6 ghz 0.976 167.81 0.40 -115.25 0.003 -132.17 0.966 177.87 2.7 ghz 0.981 166.63 0.34 -121.56 0.003 -134.27 0.963 177.52 2.8 ghz 0.984 165.35 0.30 -127.07 0.003 -135.56 0.960 177.20 2.9 ghz 0.986 164.00 0.26 -131.94 0.003 -136.27 0.959 176.90 3.0 ghz 0.988 162.54 0.24 -136.34 0.003 -136.57 0.957 176.61 3.2 ghz 0.990 159.26 0.19 -144.13 0.002 -136.53 0.956 176.02 3.4 ghz 0.991 155.29 0.17 -151.15 0.002 -136.31 0.955 175.41 3.6 ghz 0.991 150.30 0.15 -157.91 0.002 -136.53 0.955 174.76 3.8 ghz 0.990 143.73 0.14 -164.89 0.003 -137.70 0.954 174.06 4.0 ghz 0.988 134.60 0.13 -172.75 0.003 -140.42 0.954 173.32 4.2 ghz 0.985 121.09 0.14 177.52 0.003 -145.66 0.953 172.52 4.4 ghz 0.978 99.57 0.15 164.06 0.004 -155.19 0.952 171.66 4.6 ghz 0.968 63.52 0.16 143.65 0.005 -172.15 0.951 170.72 4.8 ghz 0.961 8.37 0.16 114.18 0.006 161.39 0.949 169.70 5.0 ghz 0.971 -49.39 0.13 83.48 0.005 133.32 0.947 168.55 5.2 ghz 0.984 -89.09 0.09 61.46 0.004 113.61 0.943 167.26 5.4 ghz 0.991 -112.76 0.06 47.31 0.003 101.50 0.939 165.81 5.6 ghz 0.995 -127.38 0.04 37.64 0.003 93.61 0.933 164.16 5.8 ghz 0.996 -137.07 0.03 30.34 0.002 87.89 0.926 162.23 6.0 ghz 0.998 -143.91 0.03 24.30 0.002 83.22 0.916 159.94 download this s-parameter fle in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp
12 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product dimensions CGH21240F (package type 440117)
13 CGH21240F rev 1.0 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2009-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, nc 27703 www.cree.com/wireless ryan baker marketing cree, wireless devices 919.287.7816 tom dekker sales director cree, wireless devices 919.313.5639

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